New functional materials and emerging device architectures for nonvolatile memories
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New functional materials and emerging device architectures for nonvolatile memories symposium held April 25-29, 2011, San Francisco, California, U.S.A. by Symposium Q, "New functional materials and emerging device architectures for nonvolatile memories"

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Published by Materials Research Society, Cambridge University Press in Warrendale, Pa, Cambridge .
Written in English

Subjects:

  • Computer storage devices,
  • Semiconductor storage devices,
  • Congresses,
  • Flash memories (Computers)

Book details:

Edition Notes

Statementeditors, Dirk J. Wouters ... [et al.].
SeriesMaterials Research Society symposium proceedings -- v. 1337., Materials Research Society symposia proceedings -- v. 1337.
ContributionsWouters, Dirk J., Materials Research Society. Meeting
Classifications
LC ClassificationsTK7895.M4 S967 2011
The Physical Object
Paginationxi, 159 p. :
Number of Pages159
ID Numbers
Open LibraryOL25211481M
ISBN 10160511314X
ISBN 109781605113142
LC Control Number2011284774
OCLC/WorldCa769470113

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New Functional Materials and Emerging Device Architectures for Nonvolatile Memories: Volume Dirk J. Wouters Editor. Find all books from Dirk J. Wouters, Eisuke Tokumitsu, Orlando Auciello, Panagiotis Dimitrakis, Yoshihisa Fujisaki. At you can find used, antique and new books, compare results and immediately purchase your selection at the best price. Brand: Materials Research Society Core >2 >T. Get this from a library! New functional materials and emerging device architectures for nonvolatile memories: symposium held April , , San Francisco, California, U.S.A.. [Dirk J Wouters; Materials Research Society. Fall Meeting;]. ory devices and architectures. Among them, emerging nonvolatile memories are now. very captivating. The next-generation memory market memories requ ire integration of new materials . - New Functional Materials and Emerging Device Architectures for Nonvolatile Memories Edited by Dirk J. Wouters, Eisuke Tokumitsu, Orlando Auciello, Panagiotis Dimitrakis and Yoshihisa Fujisaki Excerpt More information.

Nonvolatile semiconductor memories are gen- erally classified according to their functional properties with respect to the programming and erasing operations, as shown in the flow chart described in Figure 2. These are floating gate, nitride, ROM and fuse, Flash, emerging, and other new next-generation memory technologies. Learning mechanisms and synaptic plasticity in the brain and the device level requirements for synaptic electronics will briefly be reviewed, emphasizing the nuance compared to requirements for nonvolatile memories. Several categories of emerging synaptic devices based on phase change memory, resistive memory, electrochemical devices, and 2D. Nonvolatile Memories is a two-volume book containing 32 state-of-the-art chapters written by 71 world-leading experts on nonvolatile memories. It includes comprehensive coverage of the physics, material science, device engineering, and applications of nonvolatile memory devices.   Particularly, resistance‐based nonvolatile random access memory (NVRAM) highlights its handy and efficient application to the multiply–accumulate (MAC) operation in an analog manner. Here, an overview is given of the available types of resistance‐based NVRAMs and their technological maturity from the material‐ and device‐points of view.

  New Functional Materials and Emerging Device Architectures for Nonvolatile Memories Volume Edited by Dirk J. Wouters IMEC Eisuke Tokumitsu Tokyo Institute of Technology Orlando Auciello. A new generation of high-density and high-performance memory architectures evolving for mass storage devices, including embedded memories and nonvolatile flash memories, are serving a diverse range of applications. This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe .   1. Introduction. Due to the intense demand for a high-density, high-speed, and low-power nonvolatile memory (NVM) in semiconductor industry, the market of NVM has grown much faster than the entire semiconductor market in recent years[1, 2, 3].Dynamic random access memory (DRAM) is very fast and compatible with central processing unit (CPU).